半导体物理性能手册（第二卷 上册 英文版）

半导体物理性能手册（第二卷 上册 英文版）
出版时间：2014年版
丛编项： Springer手册精选原版系列
内容简介
　　《Springer手册精选原版系列：半导体物理性能手册（第2卷 上册）》介绍了各族半导体、化合物半导体的物理性能，包括：结构特性、热学性质、弹性性质、声子与晶格振动性质、集体效应及相关性质、能带结构：能带隙、能带结构：电子和空穴的有效质量、电子形变势、电子亲和能与肖特基势垒高度、光学性质、弹光、电光和非线性光学性质、载流子输运性质。
目录
Preface
Acknowledgments
Contents of Other Volumes
1 Cubic Boron Nitride (c-BN)
1.1 Structural Properties
1.1.1 Ionicity
1.1.2 Elemental Isotopic Abundance and Molecular Weight
1.1.3 Crystal Structure and Space Group
1.1.4 Lattice Constant and Its Related Parameters
1.1.5 Structural Phase Transition
1.1.6 Cleavage Plane
1.2 Thermal Properties
1.2.1 Melting Point and Its Related Parameters
1.2.2 Specific Heat
1.2.3 Debye Temperature
1.2.4 Thermal Expansion Coefficient
1.2.5 Thermal Conductivity and Diffusivity
1.3 Elastic Properties
1.3.1 Elastic Constant
1.3.2 Third-Order Elastic Constant
1.3.3 Young's Modulus, Poisson's Ratio, and Similar
1.3.4 Microhardness
1.3.5 Sound Velocity
1.4 Phonons and Lattice Vibronic Properties
1.4.1 Phonon Dispersion Relation
1.4.2 Phonon Frequency
1.4.3 Mode Gruneisen Parameter
1.4.4 Phonon Deformation Potential
1.5 Collective Effects and Related Properties
1.5.1 Piezoelectric Constant
1.5.2 Frohlich Coupling Constant
1.6 Energy-Band Structure: Energy-Band Gaps
1.6.1 Basic Properties
1.6.2 Eo-Gap Region
1.6.3 Higher-Lying Direct Gap
1.6.4 Lowest Indirect Gap
1.6.5 Conduction-Valley Energy Separation
1.6.6 Direct-Indirect-Gap Transition Pressure
1.7 Energy-Band Structure: Electron and Hole Effective Masses l
1.7.1 Electron Effective Mass: F Valley
1.7.2 Electron Effective Mass: Satellite Valley
1.7.3 Hole Effective Mass
1.8 'Electronic Deformation Potential
1.8.1 Intravalley Deformation Potential: I- Point
1.8.2 Intravalley Deformation Potential: High-Symmetry Points
1.8.3 Intervalley Deformation Potential
1.9 Electron Affinity and Schottky Barrier Height
1.9.1 Electron Affinity
1.9.2 Schottky Barrier Height
1.10 Optical Properties
1.10.1 Summary of Optical Dispersion Relations
1.10.2 The Reststrahlen Region
1.10.3 At or Near the Fundamental Absorption Edge
1.10.4 The Interband Transition Region
1.10.5 Free-Carrier Absorption and Related Phenomena
1.11 Elastooptic, Electrooptic, and Nonlinear Optical Properties
1.11.1 Elastooptic Effect
1.11.2 Linear Electrooptic Constant
1.11.3 Quadratic Electrooptic Constant
1.11.4 Franz-Keldysh Effect
1.11.5 Nonlinear Optical Constant
1.12 Carrier Transport Properties
1.12.1 Low-Field Mobility: Electrons
1.12.2 Low-Field Mobility: Holes
1.12.3 High-Field Transport: Electrons
1.12.4 High-Field Transport: Holes
1.12.5 Minority-Carrier Transport: Electrons in p-Type Materials
1.12.6 Minority-Carrier Transport: Holes in n-Type Materials
……
2 Hexagonal Boron Nitride (h-BN)
3 Boron Phosphide (BP)
4 Boron Arsenide (BAs)
5 Wurtzite Aluminum Nitride (w-AIN)
6 Cubic Aluminum Nitride (c-AIN)
8 Aluminum Arsenide (AIAs)
9 Aluminum Antimonide (AISb)